After multiple formulation and interface-wetting experiments, CuFeng Technology developed a diamond-copper composite.
Measured room-temperature thermal conductivity is stably above 680 W/m·K, higher than conventional pure copper (380 W/m·K) and typical AlSiC materials.
The process addresses bonding issues caused by the CTE mismatch between diamond and copper, and is intended for thermal management of high-power-density electronics such as AI chips and high-power lasers.